| 摘要 |
PROBLEM TO BE SOLVED: To stabilize breakdown voltage at the bonding end of a high breakdown voltage element or a high breakdown voltage IC. SOLUTION: In a high breakdown voltage diode 20, an N<SP>-</SP>layer 2 is provided on an N<SP>+</SP>layer 1 and a silicon substrate 3 is provided as a cathode. On the surface of the N<SP>-</SP>layer 2, a P layer 4, a P<SP>+</SP>layer 5, and a P<SP>-</SP>reduced surface field layer 6 are provided selectively and an N<SP>+</SP>stopper layer 7 is provided on the surface of the N<SP>-</SP>layer 2 while spaced apart from the P<SP>-</SP>reduced surface field layer 6. On the surface of the P<SP>-</SP>reduced surface field layer 6, a semiinsulating film 8 composed of polysilicon 22 filling the gap between silica fine particles 21 is provided while extending up to a part on the surface of the P<SP>+</SP>layer 5 and the N<SP>+</SP>stopper layer 7. COPYRIGHT: (C)2006,JPO&NCIPI
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