发明名称 Semiconductor component and method for the production thereof
摘要 An embodiment of the invention provides a semiconductor component and method of forming thereof. The component comprises a dielectric layer over a substrate, and a layer of an organic compound covalently bonded to the dielectric layer. The organic compound has a chemical functionality selected from the group consisting essentially of a silicon-halogen, a silicon-alkoxy group, an amino group, an amide group, a reactive carboxylic acid derivative, a chloride ester, or an ortho ester. The organic compound may further include a polar chemical functionality that induces a dipole moment in the organic compound. The organic compound may be arranged as a monolayer on the dielectric layer. An organic semiconducting layer is formed on the layer of the organic compound.
申请公布号 US2006113531(A1) 申请公布日期 2006.06.01
申请号 US20060329695 申请日期 2006.01.11
申请人 INFINEON TECHNOLOGIES AG 发明人 HALIK MARCUS;KLAUK HAGEN;SCHMID GUENTER;ZSCHIESCHANG UTE
分类号 H01L29/08;C23C18/18;H01L51/00;H01L51/30;H01L51/40 主分类号 H01L29/08
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