Light emitting field effect transistor for emitting light in the desired wavelength has substrate, active layer and electron injecting contact present in contact with the active layer whereby active layer contains iron disilicide

摘要

Light emitting field effect transistor has substrate (1), active layer (2) and electron injecting contact (3) and hole injecting contact (4) present in contact with the active layer. The gate electrode (6) is separated from active layer by electrically isolating layer (5) whereby active layer contains iron disilicide. Independent claims are also included for: (a) electronic circuit; and (b) optoelectronic circuit.