发明名称 SEMICONDUCTOR SUBSTRATE, ITS MANUFACTURING METHOD AND SEMICONDUCTOR APPARATUS USING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate in which deterioration of bonding strength of solder in a solder ball connection land is prevented, and which has highly reliable electric connection. <P>SOLUTION: The semiconductor substrate 1 is provided with an insulating substrate 2, a pad electrode 10 arranged on an upper face of the insulating substrate 2 for forming the solder ball connection lands 4, a connection electrode 16 formed on the lower face of the insulating substrate 2 for electric connection with the semiconductor chip, a through hole 22 provided in the insulating substrate 2 for electrically connecting the pad electrode 10 and the connection electrode 16, insulating films 12 and 20 which are formed on the upper face and the lower face of the insulating substrate 2 and have openings on the connection electrode 16 and the pad electrode 10, and the solder ball connection lands 4 formed of metal or alloy plated layers installed on the pad electrode 10. Particles constituting an Ni plated layer 24 and an Au plated layer 26 constituting the solder ball connection land 4 become substantially uniform. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006140225(A) 申请公布日期 2006.06.01
申请号 JP20040326821 申请日期 2004.11.10
申请人 RICOH CO LTD 发明人 AZUMAGUCHI MASAHIRO
分类号 H01L23/12 主分类号 H01L23/12
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