发明名称 PLASMA CVD APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which uniformizes a thickness distribution of a deposited film on a substrate to be treated and improves reproducibility for the thickness distribution of the deposited film on the substrate to be treated, by preventing overdischarge from occurring. SOLUTION: This plasma CVD apparatus has an insulating part made from an electrically insulating material arranged around a peripheral part 61 of a second electrode 5. Accordingly, the apparatus does not generate overdischarge even when repeatedly used, which uniformizes a thickness distribution of the deposited film on the substrate to be treated 2; and thereby prevents a particle from forming on the deposited film, which improves the reproducibility for the thickness distribution of the deposited film on the substrate to be treated 2. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006137999(A) 申请公布日期 2006.06.01
申请号 JP20040329521 申请日期 2004.11.12
申请人 SHARP CORP 发明人 KAWAGUCHI YOSHIHIRO;INOUE KAZUNORI
分类号 C23C16/509;H01L21/31;H01L23/12;H05K3/46 主分类号 C23C16/509
代理机构 代理人
主权项
地址