| 摘要 |
PROBLEM TO BE SOLVED: To suppress through current more positively in a power semiconductor device. SOLUTION: In the power semiconductor device comprising a pair of power switching semiconductor elements on the high voltage side and low voltage side being connected in series, a drive circuit comprises a first semiconductor element conducting upon turning the power switching semiconductor element on, a second semiconductor element conducting upon turning the power switching semiconductor element off, a gate interrupting semiconductor element being connected between the gate and emitter of the power switching semiconductor element, and a gate interrupting control line to the gate of the gate interrupting semiconductor element. The gate interrupting control line includes a delay element, for example. COPYRIGHT: (C)2006,JPO&NCIPI
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