发明名称 Temperature based DRAM refresh
摘要 A system for controlling the refresh cycles of a DRAM cell array based upon a temperature measurement. During active mode, a refresh request indication based on a measured temperature is provided to a DRAM controller (e.g. of another integrated circuit die), wherein the DRAM controller initiates a refresh cycle of the DRAM cell array in response thereto. In a self refreshing mode, the DRAM controller does not initiate refresh cycles, but refresh cycles are performed by a controller on the integrated circuit die of the array based upon a temperature measurement.
申请公布号 US2006114734(A1) 申请公布日期 2006.06.01
申请号 US20040000560 申请日期 2004.12.01
申请人 CRUZ ARNALDO R;QURESHI QADEER A 发明人 CRUZ ARNALDO R.;QURESHI QADEER A.
分类号 G11C7/00 主分类号 G11C7/00
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