| 摘要 |
In an image sensor and a method for forming the same, the method comprises: preparing a substrate having a pixel array region and a peripheral circuit region; sequentially stacking a gate electrode layer and a mask layer on the substrate; patterning the gate electrode layer and the mask layer to form a gate pattern; implanting impurities in the substrate in the pixel array region to form a photoelectric conversion region; and removing the mask layer.
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