| 发明名称 |
LOCALIZED ANNEALING OF METAL-SILICON CARBIDE OHMIC CONTACTS |
| 摘要 |
A contact for a semiconductor device can be formed by forming a metal on a Silicon Carbide (SiC) substrate and annealing an interface location of the metal and the SiC substrate to form a metal-SiC material thereat and avoiding annealing at a location on the SiC substrate to avoid forming the metal-SiC material thereat. |
| 申请公布号 |
EP1661170(A1) |
申请公布日期 |
2006.05.31 |
| 申请号 |
EP20040780967 |
申请日期 |
2004.08.12 |
| 申请人 |
CREE, INC. |
发明人 |
SLATER, DAVID, B, JR.;EDMOND, JOHN, A.;DONOFRIO, MATTHEW |
| 分类号 |
H01L33/40;H01L21/027;H01L21/04;H01L21/263;H01L21/268;H01L33/00;H01L33/34 |
主分类号 |
H01L33/40 |
| 代理机构 |
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| 主权项 |
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