| 摘要 |
1,231,906. Photo-detector. COMPAGNIE GENERALE D'ELECTRICITE. March 31, 1969 [March 29, 1968], No.16845/69. Heading G1A. [Also in Division H1] In a radiation detecting arrangement comprising an inversely biased photo-sensitive diode adapted to operate on the avalanche effect when it receives the raditation to be detected, a reference diode having a thermal sensitivity similar to that of the detecting diode is thermally coupled to the detection diode and its output is applied to control the supply voltage to the detection diode to effect temperature compensation. The diode may be PN, PIN or P#PN and a number of materials are exemplified. The diodes may be assembled on a single wafer with the reference diode larger than the detection diode and the pair may form part of a matrix. The bias voltage may be a pulsed source or the circuit may employ a modulator 22, Fig.6. Control is effected by a regulator 16 in response to a comparison in transistors 19, 20 and differential amplifier 18 of the voltage across diode 7 at K with that supplied to diode 6 at L. An explanation of the maintenance of constant multiplication is given with reference to Figs.1 2, 5, and 7 (not shown) application of the invention to a laser telemeter system and to guiding and tracking space craft is referred to. |
