发明名称 Spin valve magnetoresistive element
摘要 A first magnetic sublayer 23a of a pinned magnetic layer 23 is formed on a nonmagnetic metal layer 22 . The nonmagnetic metal layer is composed of at least one element selected from the group consisting of Ru, Re, Os, Ti, Rh, Ir, Pd, Pt, and Al. The atoms in the first magnetic sublayer and the atoms in the nonmagnetic metal layer are epitaxial and overlapped with each other, while each of the crystal structures is deformed. The deformations in the crystal structure of the first magnetic sublayer increase the magnetostriction constant, thereby providing a magnetic sensor having a large magnetoelastic effect. The first magnetic sublayer has a face-centered cubic (fcc) lattice structure in the vicinity of a boundary face adjacent to the nonmagnetic metal layer and an equivalent crystal plane represented by a 111 plane being preferentially oriented in the direction parralel to the boundary face.
申请公布号 GB2420658(A) 申请公布日期 2006.05.31
申请号 GB20060003372 申请日期 2004.01.28
申请人 ALPS ELECTRIC CO., LTD. 发明人 NAOYA HASEGAWA;EIJI UMETSU;MASAMICHI SAITO;YUKOKI IDE
分类号 G11B5/39;G01R33/09;H01F10/16;H01F10/30;H01F10/32;H01F41/30;H01L43/08 主分类号 G11B5/39
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