发明名称 COMPOUND SEMICONDUCTOR FILM, SOLAR CELL, AND METHODS FOR PRODUCING THOSE
摘要 <p>A compound semiconductor film is formed with a compound containing: A. at least one element selected from zinc, tin, cadmium, indium, and gallium; B. at least one element selected from oxygen and sulfur; and C. an element of Group IIa. A solar cell is configured to include: a substrate (11); a conductive layer (12) formed on the substrate (11); a light-absorption layer (13) that is formed on the conductive layer (12) with a compound semiconductor containing an element of Group Ib, an element of Group IIIa, and an element of Group VIa; the above-described compound semiconductor film (14) formed on the light-absorption layer (13); and a transparent conductive layer (16) formed on the compound semiconductor film (14). Such a configuration provides a compound semiconductor film having a low electric resistivity. Further by employing the compound semiconductor film having a low electric resistivity as a buffer layer of a solar cell, the energy conversion efficiency of the solar cell is improved.</p>
申请公布号 EP1662580(A1) 申请公布日期 2006.05.31
申请号 EP20040820880 申请日期 2004.11.30
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HASHIMOTO, YASUHIRO;SATOH, TAKUYA;NEGAMI, TAKAYUKI
分类号 H01L31/0336;H01L31/0749;(IPC1-7):H01L31/033;H01L31/072 主分类号 H01L31/0336
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