发明名称 |
SELF ALIGNED COMPACT BIPOLAR JUNCTION TRANSISTOR LAYOUT, AND METHOD OF MAKING SAME |
摘要 |
THE INVENTION RELATES TO A PROCESS OF FORMING A BIPOLAR JUNCTION TRANSISTOR (10) (BJT) THAT INCLUDES FORMING A TOPOLOGY OVER A SUBSTRATE (112). THEREAFTER ,A SPACER IS FORMED AT THE TOPOLOGY. A BASE LAYER IS FORMED FROM EPITAXIAL SILICON ABOVE THE SPACER AND AT THE TOPOLOGY. A LEAKAGE BLOCK STRUCTURE (158) IS FORMED IN THE SUBSTRATE (112) BY OUT- DIFFUSION FROM THE SPACER. THEREAFTER A BJT IS COMPLETED WITH THE BASE LAYER AND THE SPACER.
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申请公布号 |
MY122957(A) |
申请公布日期 |
2006.05.31 |
申请号 |
MYPI20024598 |
申请日期 |
2002.12.09 |
申请人 |
INTEL CORPORATION |
发明人 |
AHMED, SHAHRIAR;BOHR, MARK;CHAMBERS, STEPHEN;GREEN, RICHARD;MURTHY, ANAND |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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