| 摘要 |
<p>A semiconductor MRAM device includes a plurality of memory cells (MTJ) using a current flowing through a wiring. A plurality of first write lines (WBL) are electrically or magnetically or electrically and magnetically connected to the memory cells and provided along a first direction. A first connection line (CONWBL) electrically connects at least two of the first write lines each other.</p> |
