METHOD FOR FABRICATING A NITRIDED SILICON-OXIDE GATE DIELECTRIC,申请号EP20040782258-传众专利搜索

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发明名称	METHOD FOR FABRICATING A NITRIDED SILICON-OXIDE GATE DIELECTRIC
摘要
申请公布号	EP1661163(A2)	申请公布日期	2006.05.31
申请号	EP20040782258	申请日期	2004.08.26
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	BURNHAM, JAY, S.;NAKOS, JAMES, S.;QUINLIVAN, JAMES, J.;ROQUE, BERNIE, JR.;SHANK, STEVEN, M.;WARD, BETH, A.
分类号	H01L21/28;H01L;H01L21/31;H01L21/314;H01L21/336;H01L21/469;H01L29/51;(IPC1-7):H01L21/00	主分类号	H01L21/28
代理机构		代理人
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