| 发明名称 |
GaAs substrate with Sb buffering for high in devices |
| 摘要 |
GaAs substrates with compositionally graded buffer layers for matching lattice constants with high-Indium semiconductor materials such as quantum well infrared photoconductor devices and thermo photo voltaic devices are disclosed.
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| 申请公布号 |
US7053293(B2) |
申请公布日期 |
2006.05.30 |
| 申请号 |
US20040954135 |
申请日期 |
2004.09.29 |
| 申请人 |
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTERGRATION INC. |
发明人 |
UPPAL PARVEZ N |
| 分类号 |
H01L;H01L21/20;H01L29/06;H01L31/0304;H01L31/0352;H01L31/068;H01L31/072;H01L31/09 |
主分类号 |
H01L |
| 代理机构 |
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