Dielectric material compositions with high dielectric constant and low dielectric loss

摘要

A new dielectric material composition with high dielectric constant and low dielectric loss, which includes a quaternary metallic oxide having a pervoskite structure and represented by a general formula, Ba_1-xM¹_xTi_1-yM²_yO_m. It is suitable for Gbit memory devices, embedded capacitance devices in multilayered structures, and modulable capacitors for high frequency devices.