发明名称 Resist application method and device
摘要 The resist application method comprises the steps of: thermal processing for evaporating water from the surface of a wafer 10 ; making the surface of the wafer 10 hydrophobic with a hydrophobic processing material; and applying a resist onto the wafer 10 , and the step of thermal processing to the step of making the surface of the wafer 10 hydrophobic are performed in a dehumidified atmosphere.
申请公布号 US7053008(B2) 申请公布日期 2006.05.30
申请号 US20030652314 申请日期 2003.09.02
申请人 FUJITSU LIMITED 发明人 SATO TAKEHIRO
分类号 G03F7/38;H01L21/31;B05C9/10;B05D3/02;B05D3/10;G03F7/16;H01L21/027;H01L21/312 主分类号 G03F7/38
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