发明名称 Nonvolatile FeRam control device
摘要 Disclosed is a nonvolatile ferroelectric FeRAM control device which allows a programmable register to be stably driven in a low voltage region by controlling a pumping voltage supplied to the register. A pumping voltage controller is configured to output a pumping voltage control signal by receiving a power voltage control signal having a different output level according to a power voltage region where a power voltage belongs when the power control signal is applied. A cell plate voltage controller is configured to selectively output a cell plate pumping voltage control signal depending on states of the power voltage control signals when a cell plate control signal is applied. A write enable voltage controller is configured to selectively output a write enable pumping voltage control signal depending on states of the power voltage control signal, when a write enable control signal is applied. A register array including a plurality of unit registers is configured to boost and output voltage levels of data stored in a nonvolatile ferroelectric capacitor depending on voltage levels of the pumping voltage control signal, the cell plate pumping voltage control signal and the write enable pumping voltage control signal.
申请公布号 US7054182(B2) 申请公布日期 2006.05.30
申请号 US20050104579 申请日期 2005.04.13
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG HEE BOK
分类号 G11C11/22 主分类号 G11C11/22
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