发明名称 Chemoreceptive semiconductor structure
摘要 A field effect transistor has a floating gate with an extended portion. A selectively chemoreceptive finger or layer is electrostatically coupled to the extended portion of the floating gate, and induces a voltage on the gate in response to selected chemicals or other conditions affecting the finger. The voltage on the gate modulates current flowing between a source and a drain of the transistor, effectively sensing the presence of the selected chemicals or conditions. In one embodiment, multiple chemoreceptive fingers are electrostatically coupled to the extended portion of the floating gate. In a further embodiment, an array of such field effect transistors provide a sensor for multiple conditions.
申请公布号 US7053439(B2) 申请公布日期 2006.05.30
申请号 US20030695432 申请日期 2003.10.28
申请人 KAN EDWIN;MINCH BRADLEY A 发明人 KAN EDWIN;MINCH BRADLEY A.
分类号 H01L29/788;G01N27/414 主分类号 H01L29/788
代理机构 代理人
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