| 发明名称 |
Method of forming an EPROM cell and structure therefor |
| 摘要 |
An EPROM cell includes a control gate and a control transistor. A portion of the control transistor is formed as a portion of the control gate.
|
| 申请公布号 |
US7052959(B2) |
申请公布日期 |
2006.05.30 |
| 申请号 |
US20040752772 |
申请日期 |
2004.01.08 |
| 申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
NEMTSEV GENNADIY;ZHENG YINGPING;NAIR RAJESH S. |
| 分类号 |
H01L21/336;H01L21/28;H01L21/8234;H01L21/8247;H01L27/115 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
