发明名称 |
One-time programmable read only memory and manufacturing method thereof |
摘要 |
An one-time programmable read only memory is provided. An N-type doping region and a first P-type doping layer are disposed in a P-type semiconductor substrate sequentially. A second P-type doping layer is disposed between the first P-type doping layer and the N-type doping region. The second P-type doping layer with higher doping level, which has a linear structure, is served as a bit line. An electrically conductive layer is disposed over the P-type semiconductor substrate. The electrically conductive layer also has a linear structure that crosses over the first P-type doping layer. The first N-type doping layer is disposed in the P-type semiconductor substrate between the electrically conductive layer and the first P-type doping layer. The arrangement of N-type and P-type doping layer is used to be selective diode device. An anti-fuse layer is disposed between the electrically conductive layer and the first N-type doping layer.
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申请公布号 |
US7053406(B1) |
申请公布日期 |
2006.05.30 |
申请号 |
US20050907442 |
申请日期 |
2005.04.01 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HO CHIAHUA;SHIH YEN-HAO;LUNG HSIANG-LAN;HONG SHIH-PING;LEE SHIH-CHIN |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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