Method for etching a metal layer in a semiconductor device

摘要

A method for etching a metal layer on which an oxide-based ARC layer is coated in a semiconductor device comprises the step of performing a dry cleaning process by using a Cl₂/CHF₃ based gas, after dry cleaning the ARC layer by using the oxide-based gas. As a result, the etching rates of the center area and the edge area are substantially same.