Method of manufacturing a semiconductor device

摘要

A technique of using a metal element that has a catalytic action over crystallization of a semiconductor film to obtain a crystalline semiconductor film and then effectively removing the metal element remaining in the film is provided. A first semiconductor film ( 104 ) having a crystal structure is formed on a substrate. A barrier layer ( 105 ) and a second semiconductor film ( 106 ) containing a rare gas element are formed on the first semiconductor film ( 104 ). A metal element contained in the first semiconductor film ( 104 ) is moved to the second semiconductor film ( 106 ) through the barrier layer ( 105 ) by heat treatment for gettering.