| 摘要 |
A dual-mode electron beam lithography machine ( 10 ) comprises an electron beam column ( 11 ) for generating an electron beam ( 12 ) for writing a pattern on a surface of a substrate 14 ) by way of a writing current, the substrate being supported on a stage ( 13 ) movable to displace the substrate relative to the beam. The column ( 10 ) includes beam deflecting plates ( 16 ) for deflecting the beam to scan the substrate surface in accordance with the pattern to be written and beam blanking plates ( 15 ) for blanking the beam to interrupt writing. The machine further comprises control means ( 17 to 20 ) for changing each of writing current, stage movement, beam deflection and beam blanking between a predetermined first mode optimised for pattern-writing accuracy, thus resolution, and a predetermined second mode different from the first mode and optimised for pattern-writing speed, thus throughput.
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