首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
METHOD OF FORMING FIELD OXIDE LAYER IN SEMICONDUCTOR DEVICE
摘要
申请公布号
KR20060058575(A)
申请公布日期
2006.05.30
申请号
KR20040097661
申请日期
2004.11.25
申请人
HYNIX SEMICONDUCTOR INC.
发明人
RYU, CHOON KUN
分类号
H01L21/76
主分类号
H01L21/76
代理机构
代理人
主权项
地址
您可能感兴趣的专利
BIPOLAR RAM
MANUFACTURE OF SEMICONDUCTOR ELEMENT
VARIABLE CERAMIC CAPACITOR WITH INTERNAL FUSE
DEVICE FOR DISCRIMINATING BETWEEN MULTI-PCM AUDIO SIGNAL AND VIDEO SIGNAL
ROTATING MAGNETIC SHEET DEVICE
DIGITAL MAGNETIC RECORDING AND REPRODUCING DEVICE
POST TREATMENT OF OPTICAL RECORDING MEDIUM
FORM MEASURING DEVICE
VISCOSITY CONTROLLER
ROTARY HEAD TYPE MAGNETIC RECORDING AND REPRODUCING DEVICE
ENVIRONMENT DESCRIBING DEVICE
DEVELOPING DEVICE
CHARACTER RECOGNIZER
DEVELOPING DEVICE
ULTRASONIC WAVE MEASURING INSTRUMENT
SAMPLE MEASURING VALVE FOR SAMPLE PREPARATION SYSTEM
PROXIMITY FUSE
HEAT EXCHANGER
SCREW LEAD MEASURING INSTRUMENT
HEAT PIPE EMBEDDED PANEL