发明名称 Non-volatile ferroelectric cell array block having hierarchy transfer sensing architecture
摘要 The present invention discloses a non-volatile ferroelectric cell array block having a hierarchy transfer sensing architecture. The cell array block of the invention includes a plurality of sub cell arrays, each with a hierarchy bit line architecture; a plurality of sub bit line sense amplifiers for amplifying a voltage of a sub bit line; main bit line sense amplifier for amplifying a voltage of a main bit line; and a word/plate driver for selectively activating the word line and the plate line in the sub cell array. The cell array block of the invention can be advantageously used for performing more stable read and write operations on a data even with a small sized cell, by having a sub bit line capacitance independent of the main bit line.
申请公布号 US7054181(B2) 申请公布日期 2006.05.30
申请号 US20040878319 申请日期 2004.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG HEE BOK
分类号 G11C11/22;G11C5/06 主分类号 G11C11/22
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