发明名称 |
Silicon-containing resist for photolithography |
摘要 |
A photoresist includes a polymer having a main chain composed of alternating silicon and oxygen atoms and a polymer chain segment which linked as a side chain to the main chain and whose chain is composed of carbon atoms. The chain composed of carbon atoms includes acid-labile groups, so that the photoresist according to the invention can be constructed as a chemically amplified photoresist.
|
申请公布号 |
US7052820(B2) |
申请公布日期 |
2006.05.30 |
申请号 |
US20020208351 |
申请日期 |
2002.07.30 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ROTTSTEGGE JOERG;KUEHN EBERHARD;HERBST WALTRAUD;ESCHBAUMER CHRISTIAN;HOHLE CHRISTOPH;SEBALD MICHAEL |
分类号 |
G03C1/73;G03F7/004;G03F7/039;G03F7/075 |
主分类号 |
G03C1/73 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|