发明名称 |
Strained channel transistor and methods of manufacture |
摘要 |
A semiconductor device includes a region of semiconductor material with first and second isolation trenches formed therein. The first isolation trench is lined with a first material having a low oxygen diffusion rate and is filled with an insulating material. The second isolation trench is not lined with the first material but is filled with an insulating material. A first transistor is formed adjacent the first isolation region and a second transistor formed adjacent the second isolation region.
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申请公布号 |
US7052964(B2) |
申请公布日期 |
2006.05.30 |
申请号 |
US20050081919 |
申请日期 |
2005.03.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEO YEE-CHIA;KO CHIH-HSIN;LEE WEN-CHIN;HU CHENMING |
分类号 |
H01L21/336;H01L21/762;H01L21/8238;H01L27/12 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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