发明名称 |
Level shifter utilizing input controlled zero threshold blocking transistors |
摘要 |
Level shifter circuits include zero threshold transistors that reduce a voltage seen by a switching transistor of the level shifter circuits and may increase blocking of static current in the level shifter circuit. The zero threshold transistors are controlled based on the input to the level shifter circuit. Thin oxide transistors may be used to provide low threshold voltages for the switching transistors. Additional level shifter circuits include serially connected zero threshold transistors that act as switching transistors in a current mirror or latch-type level shifter circuit.
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申请公布号 |
US7053656(B2) |
申请公布日期 |
2006.05.30 |
申请号 |
US20040859952 |
申请日期 |
2004.06.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEO JIN-HO |
分类号 |
H03K19/0175;H03K19/0185;H03K19/094;H03K19/0948 |
主分类号 |
H03K19/0175 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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