发明名称 |
METHOD FOR THE PREPARATION OF GROUP IB-IIIA-VIA QUATERNARY OR HIGHER ALLOY SEMICONDUCTOR FILMS |
摘要 |
<p>This invention relates to a method for producing group IB-IIIA-VIA quaternary or higher alloy semiconductor films wherein the method comprises the steps of (i) providing a metal film comprising a mixture of group IB and group IIIA metals; (ii) heat treating the metal film in the presence of a source of a first group VIA element (said first group VIA element hereinafter being referred to as VIA1) under conditions to form a first film comprising a mixture of at least one binary alloy selected from the group consisting of a group IB -VIA1 alloy and a group IIIA-VIA1 alloy and at least one group IB-IIIA-VIA1 ternary alloy (iii) optionally heat treating the first film in the presence of a source of a second group VIA element (said second group VI element hereinafter being referred to as VIA2) under conditions to convert the first film into a second film comprising at least one alloy selected from the group consisting of a group IB-VIA1-VIA2 alloy and a group IIIA-VIA1-VIA2 alloy; and the at least one group IB- -III-VIA1 ternary alloy of step (ii); (iv) heat treating either the first film or second film to form a group IB-IIIA-VIA quaternary or higher alloy semiconductor film.</p> |
申请公布号 |
KR20060058717(A) |
申请公布日期 |
2006.05.30 |
申请号 |
KR20067003123 |
申请日期 |
2004.08.13 |
申请人 |
UNIVERSITY OF JOHANNESBURG |
发明人 |
ALBERTS VIVIAN |
分类号 |
H01L21/20;H01L31/032;H01L31/042;H01L31/18 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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