发明名称 SEMICONDUCTOR DEVICE AND MEMORY SYSTEM
摘要 PROBLEM TO BE SOLVED: To enable a resin-sealed semiconductor device composed of two semiconductor chips to be lessened in thickness and improved in electrical properties by a method wherein two semiconductor chips are laminated, and a stray capacitance between the chips is lessened. SOLUTION: A TSOP-type semiconductor device 1 is composed of two semiconductor chips 2 and 3, where the chips 2 and 3 are laminated making their rears bear against each other. Clock enable outer leads through which clock enable signals and chip selection signals are separately inputted are provided to the semiconductor chips 2 and 3. When an operator makes access to one of the semiconductor chips 2 and 3, clock enable signals and chip selection signals are kept in an inactive state, and the other semiconductor chip is get in a low power consumption mode.
申请公布号 KR100585331(B1) 申请公布日期 2006.05.30
申请号 KR19990052717 申请日期 1999.11.25
申请人 发明人
分类号 H01L25/18;H01L23/04;H01L23/12;H01L23/48;H01L25/065;H01L25/07 主分类号 H01L25/18
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