发明名称 |
Monolithic multi-functional integrated sensor and method for fabricating the same |
摘要 |
A monolithic multi-functional integrated sensor and method for making the monolithic multi-functional integrated sensor. The monolithic multi-functional integrated sensor includes: a pressure sensor including a plurality of piezoresistors having resistance values which vary with a change in external pressure, the piezoresistors being disposed in a direction so as to be subject to a piezoresistive effect produced by the external pressure at or beyond a predetermined first level; and a temperature sensor including a resistor having a resistance value which varies with a change in temperature, the resistor being disposed in a direction so as to be subject to a piezoresistive effect produced by the external pressure below a predetermined second level.
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申请公布号 |
US7051595(B2) |
申请公布日期 |
2006.05.30 |
申请号 |
US20050150212 |
申请日期 |
2005.06.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON SANG-WOOK;WON JONG-HWA |
分类号 |
G01L5/16;G01L19/04;G01D21/02;G01K7/16;G01L1/18;G01L9/00;G01L9/06 |
主分类号 |
G01L5/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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