发明名称 Substrate contact and method of forming the same
摘要 A substrate contact and semiconductor chip, and methods of forming the same. The substrate contact is employable with a semiconductor chip formed from a semiconductor substrate and includes a seal ring region about a periphery of an integrated circuit region. In one embodiment, the substrate contact includes a contact trench extending through a shallow trench isolation region and an insulator overlying the semiconductor substrate and outside the integrated circuit region. The contact trench is substantially filled with a conductive material thereby allowing the semiconductor substrate to be electrically connected with a metal interconnect within the seal ring region.
申请公布号 US7053453(B2) 申请公布日期 2006.05.30
申请号 US20040863600 申请日期 2004.06.08
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 TSAO HSUN-CHIH;HUANG CHIEN-CHAO;YANG FU-LIANG
分类号 H01L29/76;H01L23/00;H01L23/52;H01L23/58 主分类号 H01L29/76
代理机构 代理人
主权项
地址
您可能感兴趣的专利