发明名称 |
Substrate contact and method of forming the same |
摘要 |
A substrate contact and semiconductor chip, and methods of forming the same. The substrate contact is employable with a semiconductor chip formed from a semiconductor substrate and includes a seal ring region about a periphery of an integrated circuit region. In one embodiment, the substrate contact includes a contact trench extending through a shallow trench isolation region and an insulator overlying the semiconductor substrate and outside the integrated circuit region. The contact trench is substantially filled with a conductive material thereby allowing the semiconductor substrate to be electrically connected with a metal interconnect within the seal ring region.
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申请公布号 |
US7053453(B2) |
申请公布日期 |
2006.05.30 |
申请号 |
US20040863600 |
申请日期 |
2004.06.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAO HSUN-CHIH;HUANG CHIEN-CHAO;YANG FU-LIANG |
分类号 |
H01L29/76;H01L23/00;H01L23/52;H01L23/58 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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