| 发明名称 |
Semiconductor memory device and manufacturing method thereof |
| 摘要 |
A method for manufacturing a semiconductor device including an electrode having a lower silicon layer and an upper silicon layer which is formed on the lower silicon layer. A concentration of impurities in the upper silicon layer is higher than a concentration of impurities in the lower silicon layer.
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| 申请公布号 |
US7052955(B2) |
申请公布日期 |
2006.05.30 |
| 申请号 |
US20020302990 |
申请日期 |
2002.11.25 |
| 申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
YO SHOJI |
| 分类号 |
H01L21/8242;H01L23/52;H01L21/02;H01L21/3205;H01L21/768;H01L27/108 |
主分类号 |
H01L21/8242 |
| 代理机构 |
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