Semiconductor device and method of manufacturing semiconductor device,申请号US20040772280-传众专利搜索

发明名称	Semiconductor device and method of manufacturing semiconductor device
摘要	Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
申请公布号	US7053455(B2)	申请公布日期	2006.05.30
申请号	US20040772280	申请日期	2004.02.06
申请人		发明人
分类号	C23C14/06;H01L29/94;C23C14/34;H01L21/28;H01L21/283;H01L21/318;H01L21/336;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;H01L29/423;H01L29/49;H01L29/51;H01L29/78;H01L31/062	主分类号	C23C14/06
代理机构		代理人
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