КОРРЕКЦИЯ ТЕМПЕРАТУРЫ И ТЕХНОЛОГИЧЕСКОГО ПРОЦЕССАВ ПОЛЕВОМ МОП-ТРАНЗИСТОРЕ, РАБОТАЮЩЕМ В ПОДПОРОГОВОМ РЕЖИМЕ

摘要

Compensation for variations in temperature and manufacturing process of a MOSFET operating in its sub-threshold mode. The compensation may include circuitry containing at least a second MOSFET that may also operate in its sub-threshold mode. The operational characteristics of the second MOSFET may be closely matched to those of the first MOSFET, and the second MOSFET may be contained on the same substrate.