| 摘要 |
FIELD: physics. ^ SUBSTANCE: method of oxide compound epitaxial films obtaining involves creation of film layers on the surface of monocrystal substrates, with chemical composition of the film differing from that of the substrate, by substrate heating in the air and further cooling at room temperature. In this method, the substrate contains chemical components of the target film, and heating is implemented within T1-T2 temperature range, where T1 is the bottom temperature of formation of thermodynamically stable compound, which forms the layers of target film, and T2 is the starting temperature of the compound decomposition. Due to heating the substrate components are diffused in the surface direction, and in that process they are involved in chemical reaction, with the resulting oxide compounds oriented so, that a target film of a given thickness is formed on the substrate. ^ EFFECT: simplifies obtaining of stable composite epitaxial films of a wide range of thickness, improves quality due to higher adhesion and stoichiometry of the composition. ^ 4 cl |
