A method for fabricating a wafer structure with a strained silicon layer and an intermediate productof this method,申请号SG20050006799-传众专利搜索

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发明名称	A method for fabricating a wafer structure with a strained silicon layer and an intermediate productof this method
摘要
申请公布号	SG122004(A1)	申请公布日期	2006.05.26
申请号	SG20050006799	申请日期	2005.10.19
申请人	S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A.	发明人	LAVAILLANT YVES-MATTHIEU
分类号		主分类号
代理机构		代理人
主权项
地址

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