发明名称 SILICON MONOXIDE VAPOR DEPOSITION MATERIAL AND METHOD FOR PREPARATION THEREOF
摘要 In a method for preparing a silicon monoxide vapor deposition material wherein a mixture of a silicon powder and a silicon dioxide powder is heated and reacted in a raw material chamber under vacuum to generate a silicon monoxide gas and silicon monoxide is precipitated on a precipitation substrate in a precipitation chamber provided above the raw material chamber, an improvement which comprises using, as the precipitation substrate, a cylindrical body wherein a circumference wall is inclined from the perpendicular by 1 to 45 degrees and the inner diameter of the upper end thereof is smaller than that of the lower end, and effecting the precipitation under a vacuum of 7 Pa to 40 Pa. The method allows the preparation of a silicon monoxide vapor deposition material exhibiting a weight reduction rate in the rattler test (a rattler value) of 1.0 % or less and being reduced in the occurrence of the splash phenomenon during the formation of a silicon monoxide vapor deposition film. <IMAGE>
申请公布号 KR100583795(B1) 申请公布日期 2006.05.26
申请号 KR20047003038 申请日期 2002.09.13
申请人 发明人
分类号 C01B33/113;C23C14/10;C23C14/22;C23C14/24 主分类号 C01B33/113
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