发明名称 |
METHOD FOR FABRICATING AND SEPARATING SEMICONDUCTOR DEVICES |
摘要 |
A method of fabricating and separating semiconductor structures comprises the steps of: (a) partially forming a semiconductor structure attached to a support structure, the partially formed semiconductor structure comprising a plurality of partially formed devices, where the partially formed devices are attached to one another by at least one connective layer; (b) forming a partial mask layer over at least a part of the partially formed devices; (c) etching the connective layer to separate the devices; and (d) removing the partial mask layer. Advantages of the invention include higher yield than conventional techniques. In addition, less expensive equipment can be used to separate the devices. The result is a greater production of devices per unit of time and per dollar. |
申请公布号 |
WO2006055601(A2) |
申请公布日期 |
2006.05.26 |
申请号 |
WO2005US41467 |
申请日期 |
2005.11.15 |
申请人 |
VERTICLE INC;YOO, MYUNG CHEOL |
发明人 |
YOO, MYUNG CHEOL |
分类号 |
H01L21/30;H01L33/00;H01L33/40;H01L33/44 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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