SILICON CARBIDE MOS FIELD-EFFECT TRANSISTOR AND PROCESS FOR PRODUCING THE SAME

摘要

In the SiC vertical MOSFET having a low-concentration p-type deposition film provided therein with a channel region and a base region resulting from knock back to n-type through ion injection, dielectric breakdown of gate oxide film used to occur at the time of off, thereby preventing a further voltage resistance enhancement. This problem has been resolved by interposing of a low-concentration n-type deposition film between a low-concentration p-type deposition film and a high-concentration gate layer and selectively forming of a base region resulting from knock back to n-type through ion injection in the low-concentration p-type deposition film so that the thickness of deposition film between the high-concentration gate layer and each of channel region and gate oxide layer is increased.