| 摘要 |
<p>A semiconductor radiation detector device comprises a transport layer (120, 330) of semiconductor material of a first conductivity type and a radiation entry window of a second conductivity type (110) on one side thereof. A collector electrode (160, 1525) is coupled to the transport layer (120, 330) for collecting radiation-induced signal charge. On one side of the transport layer opposite to the radiation entry window (110) there are electrode means (151 - 154, 351 - 359, 751 - 753, 1251 - 1253, 1451 - 1456) coupled to different potentials for creating a charge-directing electric field inside the transport layer. Between said electrode means and the transport layer, an essentially continuous doping layer (140) of the second conductivity type extends across a number of said electrode means. The radiation entry window, the collector electrode and the electrode means are biased such, that the transport layer in the active area is depleted and that on a straight line between the radiation entry window (110) and the large area doping (140), a potential energy minimum for majority carriers of the first conductivity type is formed inside the transport layer.</p> |
