NITRIDE COMPOUND SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME

摘要

A nitride compound semiconductor device comprising conductive substrate structure (101) and, supported thereby, a semiconductor laminate structure. The major plane of the substrate structure (101) has not only at least one longitudinal growth region functioning as a seed crystal for longitudinal growth of nitride compound semiconductor but also multiple lateral growth regions realizing lateral growth of the nitride compound semiconductor having grown on the longitudinal growth region. When the total size of longitudinal growth region along the direction of arrow A is referred to as SX while the total size of multiple lateral growth regions along the same direction is referred to as SY, there is the relationship SX/SY>1.0.