| 摘要 |
A semiconductor device including a nonvolatile memory(10) and the fabrication method of the same is described. According to the semiconductor device, a second gate electrode film(44) is used for a gate electrode film of a logic circuit, and for a control gate electrode film of a nonvolatile memory. As the second gate electrode film(44) is formed at a relatively later step in fabrication, subsequent thermal process may be avoided. The gate structure is suitable for miniaturization of the transistor in the logic circuit. |
