A method for removing residue from a layer of conductive material on a substrate is provided herein. In one embodiment, the method includes introducing a process gas into a vacuum chamber having a substrate surface with residue from exposure to a fluorine-containing environment. The process gas includes a hydrogen-containing gas. Optionally, the process gas may further include an oxygen-containing or a nitrogen containing gas. A plasma of the process gas is thereafter maintained in the vacuum chamber for a predetermined period of time to remove the residue from the surface. The temperature of the substrate is maintained at a temperature between about 10 degrees Celsius and about 90 degrees Celsius during the plasma step.
申请公布号
WO2006055460(A2)
申请公布日期
2006.05.26
申请号
WO2005US41084
申请日期
2005.11.10
申请人
APPLIED MATERIALS, INC.;CHIANG, KANG-LIE;CAI, MAN-PING;MA, SHAWMING;YE, YAN;HSIEH, PETER
发明人
CHIANG, KANG-LIE;CAI, MAN-PING;MA, SHAWMING;YE, YAN;HSIEH, PETER