发明名称 METHODS AND STRUCTURES FOR ELECTRICAL COMMUNICATION WITH AN OVERLYING ELECTRODE FOR A SEMICONDUCTOR ELEMENT
摘要 <p>Structures for electrical communication with an overlying electrode for a semiconductor element and methods for fabricating such structures are provided. The structure (10) for electrical communication with an overlying electrode comprises a first electrode (50) having a lateral dimension, a semiconductor element (14) overlying the first electrode, and a second electrode (30) overlying the semiconductor element. The second electrode (30) has a lateral dimension that is less than the lateral dimension of the first electrode (50). A conductive hardmask (42) overlies the second electrode and is in electrical communication with the second electrode. The conductive hardmask (42) has a lateral dimension that is substantially equal to the lateral dimension of the first electrode. A conductive contact element (56) is in electrical communication with the conductive hardmask.</p>
申请公布号 WO2006055179(A2) 申请公布日期 2006.05.26
申请号 WO2005US38153 申请日期 2005.10.25
申请人 FREESCALE SEMICONDUCTOR, INC.;BUTCHER, BRIAN, R.;GRYNKEWICH, GREGORY, W.;KYLER, KELLY, W.;SMITH, KENNETH, H.;WILLIAMS, RICHARD, G. 发明人 BUTCHER, BRIAN, R.;GRYNKEWICH, GREGORY, W.;KYLER, KELLY, W.;SMITH, KENNETH, H.;WILLIAMS, RICHARD, G.
分类号 H01L27/108 主分类号 H01L27/108
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