METHODS AND STRUCTURES FOR ELECTRICAL COMMUNICATION WITH AN OVERLYING ELECTRODE FOR A SEMICONDUCTOR ELEMENT
摘要
<p>Structures for electrical communication with an overlying electrode for a semiconductor element and methods for fabricating such structures are provided. The structure (10) for electrical communication with an overlying electrode comprises a first electrode (50) having a lateral dimension, a semiconductor element (14) overlying the first electrode, and a second electrode (30) overlying the semiconductor element. The second electrode (30) has a lateral dimension that is less than the lateral dimension of the first electrode (50). A conductive hardmask (42) overlies the second electrode and is in electrical communication with the second electrode. The conductive hardmask (42) has a lateral dimension that is substantially equal to the lateral dimension of the first electrode. A conductive contact element (56) is in electrical communication with the conductive hardmask.</p>