| 摘要 |
<p>Heterostructures are used for producing semiconductor injecting radiation sources such as injector lasers, semiconductor amplifying elements and semiconductor optical amplifiers for fibre-optical communications and data transmission systems, optical very high-speed computer and switching systems, for developing medical devices, laser processing equipment, lasers with doubled generated radiation frequency and for pumping solid-state and fibre lasers and amplifiers. The inventive heterostructure, injector laser, semiconductor amplifying element and semiconductor optical amplifier are substantially characterised by the modernisation of the heterostructure active field and inflowing area, the integrated selection of location, compositions, refractive indexes and the thicknesses of the layers thereof which ensure the efficient operation of the injector lasers, semiconductor amplifying elements and semiconductor optical amplifiers in the transition region, where the controlled radiation inflow of the active layer is formed.</p> |
