Silicon on insulator barrier layer formation method using hydrogen ion peeling technique - involves treating silicon substrate SOI barrier layer, insulating film and support board at specific temperature such that oxygen precipitation is not caused

摘要

Heat treatment of silicon substrate SOI barrier layer, insulating film and support board at specific temperature is performed in temperature ranges 300-800 [deg]C and 1000-1200 [deg]C such that oxygen is not precipitated during heat treat since SOI barrier layer is of low oxygen concentration. - A silicon oxide film (3) is formed on silicon substrate (1) with SOI barrier layer in which hydrogen ion is implanted and laminated on support board (2) An independent claim is also included for SOI substrate.