发明名称 LEVEL SHIFT CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING IT
摘要 PROBLEM TO BE SOLVED: To provide a level shift circuit which has a sufficient amplitude conversion ability even when the voltage amplitude of an input signal is small, uses less power, and operates at a high speed. SOLUTION: With respect to n-channel MOS transistors TN-A and TN-B and p-channel MOS transistors TP-A and TP-B comprising the level shift circuit, p-channel MOS transistors TP-C and TP-D comprising a current mirror circuit are formed at the drain of the p-channel MOS transistors TP-A and TP-B. In this manner, the level shift circuit is provided which prevents through-current from VDDH to VSS and operates at a high speed. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006135560(A) 申请公布日期 2006.05.25
申请号 JP20040321374 申请日期 2004.11.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MIZUKAMI KOYO;KIDA KAZUHISA
分类号 H03K19/0185;H03F1/02;H03F3/34 主分类号 H03K19/0185
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